The HSPM-05PS room temperature probe table Hall test system can provide a fixed magnetic field test environment for precision small (nanometer) microelectronic devices, magnifying the tested sample through a microscope, needle insertion with a high-precision microprobe, and Hall test and analysis with an external Hall measuring instrument。 

The HSPM-05PS Room temperature Probe Hall test system provides a vertical magnetic field environment for 8 inch samples and devices to be tested。External connection Other electrical meters can perform non-destructive electrical testing of chips, wafers and devices at room temperature, such as current, voltage, resistance and other electrical signals under different magnetic fields。

System features:

• Stable dual displacement adjustment system to adjust the displacement of the sample seat and probe arm 
• The sample holder can hold 8-inch wafer samples and is secured by controlled gas adsorption using porous partitions。 
• Can automatically control the forward and backward movement of permanent magnet and N.The S-pole flips, and can be accurately positioned, and the magnetic field size is 0.5T 
• 6 probe arms can be mounted 
• The probe arm adopts magnet adsorption, can be moved arbitrarily, and can be fine-tuned in three dimensions for easy operation, precise needle insertion, the probe of the four probe arms can be inserted into any position of the sample。 
• The probe arm adopts three coaxial cables and three coaxial connectors, and the leakage current is small, within 100fA 
•CCD magnification is 180 times, working distance is 100mm

Test materials:

• Thermoelectric materials: bismuth telluride, lead telluride, silicon germanium alloy, etc
• Photovoltaic materials/solar cells: (A-silicon (monocrystalline silicon, amorphous silicon), CIGS (copper indium Gallium selenium), cadmium telluride, perovskite, etc.)
• Organic materials: (OFET, OLED)
• Transparent conductive metal oxide TCO: (ITO, AZO, ZnO, IGZO (Indium gallium zinc oxide), etc.)
• Semiconductor materials: SiGe, InAs, SiC, InGaAs, GaN, SiC, InP, ZnO, Ga2O3, etc
• 2D materials: graphene, BN, MoS2, etc

Parameters and indicators: